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| MMBTA92 / MMBTA93 MMBTA92 / MMBTA93 PNP Version 2005-06-21 1.1 Surface mount High Voltage Transistors Hochspannungs-Transistoren fur die Oberflachenmontage Power dissipation Verlustleistung 0.1 PNP 250 mW SOT-23 (TO-236) 0.01 g 2.9 0.1 0.4 3 1.3 Type Code 1 2 2.5 max Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC Grenzwerte (TA = 25C) MMBTA92 300 V 300 V 5V 250 mW 1) 500 mA -65...+150C -65...+150C MMBTA93 200 V 200 V Tj TS Characteristics (Tj = 25C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 200 V IE = 0, - VCB = 160 V Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 3 V Collector saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 20 mA, - IB = 2 mA Base saturation voltage - Basis-Sattigungsspannung 2) - IC = 20 mA, - IB = 2 mA - VBEsat - - VCEsat - - IEB0 - MMBTA92 MMBTA93 - ICB0 - ICB0 - - Kennwerte (Tj = 25C) Typ. - - - - - Max. 250 nA 250 nA 100 nA 500 mV 900 mV 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 MMBTA92 / MMBTA93 Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 10 V, - IC = 1 mA - VCE = 10 V, - IC = 10 mA - VCE = 10 V, - IC = 30 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 10 V, - IC = 20 mA, f = 100 MHz Collector-Base capacitance - Kollektor-Basis-Kapazitat - VCB = 20 V, IE =ie = 0, f = 1 MHz Thermal resistance junction - ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung MMBTA92 MMBTA93 CCB0 CCB0 RthA - - - - < 420 K/W 1) MMBTA42, MMBTA43 MMBTA92 = 2D MMBTA93 = 2E 6 pF 8 pF fT 50 MHz - - hFE hFE hFE 25 40 25 - - - - - - Kennwerte (Tj = 25C) Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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